赵德刚
赵德刚，男，1972年出生，博士，中国科学院半导体所研究员、博士生导师、光电子研究发展中心主任，2009年国家杰出青年科学基金获得者，2011年第十二届中国青年科技奖获得者，2017年国家百千万人才工程入选者，2018年国家中青年科技创新领军人才入选者，2019年第四批国家万人计划入选者，国家重点研发计划首席科学家，享受国务院政府特殊津贴专家，中国科学院特聘研究员。1994年、1997年在电子科技大学微电子科学与工程系分别获得学士和硕士学位，2000年在中国科学院半导体研究所获得博士学位。博士毕业后一直留所工作至今，主要从事GaN基光电子材料生长与器件研究，对材料生长机理、材料物理、器件设计及器件物理有较深入的理解和认识，解决了GaN材料大失配异质外延技术等关键难题，研制出我国第一支GaN基紫外激光器、长寿命大功率蓝光激光器和紫外雪崩光电探测器，还在碳杂质研究做出了系统性、创新性工作。主持和承担了国家重点研发计划、863、国家自然科学基金等多个项目，在Applied Physics Letters等著名学术刊物上发表SCI论文270多篇，获得国家发明专利30多项，撰写中文、英文专著各一章。
取得的主要学术成绩如下：
在GaN材料方面，我们深入研究了缓冲层原理，提出了独特的MOCVD外延方法，生长出高质量的GaN材料，室温下电子迁移率超过1000 cm2/Vs，这是目前国际上MOCVD外延的最好结果[D. G. Zhao et al, APL 89, 112106 (2006)]；创造性提出了复合缓冲层结构，突破了无裂纹的AlN外延材料技术，其（002）、（102）面XRD半高宽均可控制在200弧秒；发现室温下GaN材料的应力状态主要取决于外延层和衬底之间的热失配，还发现GaN材料中的“黄光缺陷”和“蓝光缺陷”与刃位错和碳杂质紧密相关，并初步建立了GaN的光学、电学、结构性质的关系模型；发现了碳杂质对p-GaN材料的补偿效应，提出了少量掺氧的p型杂质激活方法，解决了p型掺杂难题。
在GaN器件方面，设计出能够监测紫外波长的新型器件，提出了利用紫外探测器的响应光谱对p-GaN载流子浓度进行测量的新方法；研究了p-GaN的欧姆接触工艺技术，实现了良好的欧姆接触特性，揭示了欧姆接触、空位缺陷和碳杂质对探测器的影响机理；研究了InGaN量子阱界面控制方法，分析了量子阱的电荧光光谱随注入电流变化的机制，并提出了相应的物理模型；提出了降低吸收损耗、抑制电子泄漏的多种激光器新结构，阐述了V型缺陷和碳杂质破坏发光器件性能的物理机制；研制出我国第一支GaN基紫外激光器、长寿命大功率蓝光激光器以及紫外雪崩光电探测器。
本人指导的研究生获得了中国科学院院长奖、国家奖学金、王守武奖学金、朱李月华优秀博士生奖等多种荣誉，本课题组拥有MOCVD设备及多种材料和器件测试分析仪器，实验条件较好，目前主要招收硕博连读生及博士生。
联系方式：
电话：010-82304208；Email: dgzhao@red.semi.ac.cn
在研/完成项目：
1、国家重点研发计划：“面向激光显示的三基色半导体激光器（LD）关键材料与技术基础研究”，2016.07-2020.12，主持
2、中国科学院：“GaN基光电子材料与器件”，2015.01-2017.12，主持
3、国家杰出青年科学基金：“GaN 基光电子材料与器件的基础问题”，2010.01-2013.12，主持
代表性学术论文（30篇）：
[1] F. Liang, D. G. Zhao*, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, J. Yang, S. T. Liu, Y. Xing, and L. Q. Zhang, "Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN", Nanomaterials 8, 1026 (2018) 【材料物理】
[2] L. Y. Peng, D. G. Zhao*, D. S. Jiang, J. J. Zhu, Z. S. Liu, P. Chen, J. Yang, W. Liu, F. Liang, Y. Xing, S. T. Liu, L. Q. Zhang, W. J. Wang, M. Li, Y. T. Zhang, and G. T. Du, "Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells", Optics Express 26, 21736 (2018)【器件物理】
[3] W. Liu, D. G. Zhao*, D. S. Jiang, D. P. Shi, J. J. Zhu, Z. S. Liu, P. Chen, J. Yang, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, M. Li, Y. T. Zhang, and G. T. Du, "Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells", Optics Express, 26, 314174 (2018)【材料物理】
[4] D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, "Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes", Journal of Semiconductors 38, 051001 (2017)【器件物理】
[5] J. Yang, D. G. Zhao*, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, W. Liu, X. Li, F. Liang, S. T. Liu, L. Q. Zhang and H. Yang, "Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes", Scientific Reports 7, 44850 (2017)【材料生长】
[6] J. Yang, D. G. Zhao*, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. J. Li, X. G. He, J. P. Liu, L. Q. Zhang, H. Yang, Y. T. Zhang, and G. T. Du, "Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes", Optics Express 24, 13824 (2016)【材料物理】
[7] W. Liu, D. G. Zhao*, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. Li, F. Liang, J. P. Liu, L. Q. Zhang, H. Yang, Y. T. Zhang, and G. T. Du, "Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes", Journal of Physics D: Applied Physics 49, 145104 (2016)【器件物理】
[8] W. Liu, D. G. Zhao*, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, "Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells", Optics Express 23, 15935 (2015)【材料物理】
[9] J. Yang, D. G. Zhao*, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, H. Yang, Y. T. Zhang, and G. T. Du, "Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness", Journal of Applied Physics 117, 055709 (2015)【材料生长】
[10] J. Yang, D. G. Zhao*, D. S. Jiang, P. Chen, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, S. M. Zhang, H. Wang, J. J. Zhu, and H. Yang, "Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films", Journal of Applied Physics 115, 163704 (2014)【材料物理】
[11] L. C. Le, D. G. Zhao*, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, X. G. He, X. J. Li, J. P. Liu, J. J. Zhu, S. M. Zhang, and H. Yang, "Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes", Optics Express 22, 11392 (2014)【器件设计】
[12] L. C. Le, D. G. Zhao*, D. S. Jiang, L. Li, L. L. Wu, P. Chen, Z. S. Liu, J. Yang, X. J. Li, X. G. He, J. J. Zhu, H. Wang, S. M. Zhang, and H. Yang, "Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness", Journal of Applied Physics 114, 143706 (2013)【材料物理】
[13] L. L. Wu, D. G. Zhao*, D. S. Jiang, P. Chen, L. C. Le, L. Li, Z. S. Liu, S. M. Zhang, J. J. Zhu, H. Wang, B. S. Zhang, and H. Yang, "Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN", Semiconductor Science and Technology 28, 105020 (2013)【器件物理】
[14] L. C. Le, D. G. Zhao*, D. S. Jiang, L. Li, L. L. Wu, P. Chen, Z. S. Liu, Z. C. Li, Y. M. Fan, J. J. Zhu, H. Wang, S. M. Zhang, and H. Yang, "Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes", Applied Physics Letters 101, 252110 (2012)【材料物理】
[15] D. G. Zhao, D. S. Jiang, L. L. Wu, L. C. Le, L. Li, P. Chen, Z. S. Liu, J. J. Zhu, H. Wang, S. M. Zhang, and H. Yang, "Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire", Journal of Alloys and Compounds 544, 94 (2012)【材料生长】
[16] D. G. Zhao, S. Zhang, D. S. Jiang, J. J. Zhu, Z. S. Liu, H. Wang, S. M. Zhang, B. S. Zhang, and H. Yang, "A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector", Journal of Applied Physics 110, 053701 (2011)【器件物理】
[17] D. G. Zhao, D. S. Jiang, J. J. Zhu, H. Wang, Z. S. Liu, S. M. Zhang, and H. Yang, " Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector ", Journal of Alloys and Compounds 492, 300 (2010)【器件物理】
[18] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, H. Wang, S. M. Zhang, Y. T. Wang, and H. Yang, “Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films”，Applied Physics Letters 95, 041901 (2009)【材料物理】
[19] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang and H. Yang, “A GaN photodetector integrated structure for wavelength characterization of ultraviolet light”，Semiconductor Science and Technology 23, 095021 (2008)【器件设计】
[20] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, H. Yang, U. Jahn, and K. H. Ploog, "Al composition variations in AlGaN films grown on low temperature GaN buffer layer by metalorganic chemical vapor deposition", Journal of Crystal Growth, 30, 5266 (2008)【材料生长】
[21] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, H. Yang, X. Li, X. Y. Li, and H. M. Gong, "Influence of defects in n—-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors", Applied Physics Letters 90, 062106 (2007)【器件物理】
[22] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang and H. Yang, “Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN ?”, Journal of Applied Physics, 102, 113521 (2007)【材料物理】
[23] D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, H. Yang, and J. W. Liang, , "Influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer", Journal of Crystal Growth, 303, 414 (2007)【材料生长】
[24] D. G. Zhao, H. Yang, J. J. Zhu, D. S. Jiang, Z. S. Liu, S. M. Zhang, Y. T. Wang, and J. W. Liang, “Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films”, Applied Physics Letters 89, 112106 (2006)【材料生长】
[25] D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. P. Hao, L. Wei, X. Liu, X. Y. Li, and H. M. Gong, “Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films ”, Applied Physics Letters 88, 252101 (2006)【器件物理】
[26] D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Liu, X. Y. Li, and H. M. Gong, “Role of edge dislocation in enhancing the yellow luminescence of n-type GaN ”, Applied Physics Letters, 88, 241917 (2006)【材料物理】
[27] D. G. Zhao, J. J. Zhu, D. S. Jiang, H. Yang, J. W. Liang, X. Y. Li, and H. M. Gong, “Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition”, Journal of Crystal Growth, 289, 72 (2006)【材料生长】
[28] D. G. Zhao, Z. S. Liu, J. J. Zhu, S. M. Zhang, D. S. Jiang, H. Yang, J. W. Liang, X. Y. Li, and H. M. Gong, “Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition”, Applied Surface Science , 253, 2452 (2006)【材料生长】
[29] D. G. Zhao, J. J. Zhu, Z. S. Liu, S. M. Zhang, H. Yang, D. S. Jiang, “Surface morphology of AlN buffer layer and its effect on the GaN growth by metalorganic vapor chemical deposition”, Applied Physics Letters 85, 1499 (2004)【材料生长】
[30] D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang, “Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire”, Applied Physics Letters 83, 677 (2003)【材料物理】
