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Lin lanying
 


    Li Lanying: semiconductor materials scientist. Female. Native of Putian, Fujian Province. Graduated from the Fujian Union College. Got the doctorate degree from the University of Pennsylvania, USA in 1955. Researcher/Professor of the Institute of Semiconductors, Chinese Academy of Sciences. Vice-Chairman of the China Association for Science and Technology. Having been engaged in the study of semiconductor materials, she was one of the pioneers of semiconductor science in China. She was in charge of the RLD of the first Si, InSb, GaAs, GaP single crystal in China, laying a foundation for the development of microelectronics and optoelectronics in China. The high pure VPE and LPE materials she developed reached the international advanced level. In recent years, she initiated a new research field in microgravity semiconductor materials, and achieved outstanding results which attracked world attention in growing and properties study of GaAs crystals in space. She was elected Member(academician?) of the CAS in 1980.